SEMICONDUCTOR LAYER AND ITS MANUFACTURING METHOD

Title:

SEMICONDUCTOR LAYER AND ITS MANUFACTURING METHOD

Document Type and Number:

Japanese Patent JP3926313

Kind Code:

B2

Abstract:

PROBLEM TO BE SOLVED: To provide semiconductor laser elements capable of emitting laser light of low ellipticity even in an operation environment of high temperature and to provide a method for manufacturing these semiconductor laser elements.
SOLUTION: In manufacturing a semiconductor laser constituted of forming a lower clad layer 103, an active layer 105 including quantum well layer and an upper clad layer 106 on the upper part of a semiconductor substrate 100 in order and having a window area C including a layer on which the quantum well layer of the active layer 105 is adjacent to the active layer 105 and a mixed crystal part, the refractive index of the lower clad layer 103 is larger than that of the upper clad layer and the extent of light intensity distribution 140C in the window area C in the direction perpendicular to the surface of the semiconductor substrate 100 is wider than the extent of the light intensity distribution in a gain area A.

Inventors:

Watanabe Masanori
Akihiro Matsumoto
Takeoka Tadashi
Fumie Kunimasa

Application Number:

JP2003335423A

Publication Date:

June 06, 2007

Filing Date:

September 26, 2003

Export Citation:

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Assignee:

Sharp Corporation

International Classes:

H01S5/20; B82Y20/00; H01S5/00; H01S5/028; H01S5/16; H01S5/223; H01S5/22; H01S5/32; H01S5/343; (IPC1-7): H01S5/20; H01S5/16

Domestic Patent References:

JP2002026451A
JP2001210910A
JP2004235382A
JP11026864A
JP11145553A
JP2002185077A

Attorney, Agent or Firm:

Kuro Fukami
Toshio Morita
Yoshihei Nakamura
Yutaka Horii
Hisato Noda
Masayuki Sakai

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