Title:
半導体発光素子およびその製造方法
Document Type and Number:
Japanese Patent JP4301136
Kind Code:
B2
Abstract:
A first principal plane faces a second principal plane of a p-type Ga N compound semiconductor that is in contact with an MQW luminescent layer. On the surface of the first principal plane, a first region made up of the p-type Ga N compound semiconductor including at least Ni is formed. On the surface of the first region, an electrode composed of an alloy including Ni and Aluminum is formed. On the electrode, a pad electrode for external connection consisting of Al or Au is formed.
Inventors:
Yoshinori Tada
Tetsuji Heather
Niwa Airi
Yasuhiro Kami
Junji Sato
Takashi Kato
Tetsuji Heather
Niwa Airi
Yasuhiro Kami
Junji Sato
Takashi Kato
Application Number:
JP2004302665A
Publication Date:
July 22, 2009
Filing Date:
October 18, 2004
Export Citation:
Assignee:
Sanken Electric Co., Ltd.
International Classes:
H01L33/06; H01L33/32; H01L33/36; H01L33/42
Domestic Patent References:
| JP2000049114A | ||||
| JP10308534A | ||||
| JP10173222A |
Other References:
Y.-L.Li et al.,Low-resistance ohmic contacts to p-type GaN,Applied Physics Letters,2000年 5月 8日,Vol. 76, No. 19,pp.2728-2730
Y. C. Lin et al.,Nitride-Based Light-Emitting Diodes with Ni/ITO p-type Ohmic Contacts,IEEE Photnics Technology Letters,2002年12月,Vol. 14, No.12,pp.1668-1670
Y. C. Lin et al.,Nitride-Based Light-Emitting Diodes with Ni/ITO p-type Ohmic Contacts,IEEE Photnics Technology Letters,2002年12月,Vol. 14, No.12,pp.1668-1670
Attorney, Agent or Firm:
Tadashi Takahashi
Masatake Shiga
Masakazu Aoyama
Kiyoshi Kato
Masatake Shiga
Masakazu Aoyama
Kiyoshi Kato