To prevent the increase of an intensity of emitted light near the side of an island-like semiconductor layer, by providing slits extending in the direction of two electrodes for one conductivity type semiconductor layer and an opposite conductivity type semiconductor layer between the electrodes connected to the exposure part of one conductivity type semiconductor layer and the opposite conductivity type semiconductor layer facing the exposure part.

One conductivity type semiconductor layer 3 is provided on a substrate 1, and the opposite conductivity type semiconductor layer 4 is provided on the semiconductor layer 3 so that one end side of the semiconductor layer 3 is exposed. Electrodes 6 and 7 are connected to the exposure part of the semiconductor layer 3 and the end side of the semiconductor layer 4 facing the exposure part. Slits 5 extending in the direction of the two electrodes are provided for the semiconductor layer 3 and the semiconductor layer 4 between the two electrodes 6 and 7. The slits 5 sufficient if they are formed to the width of about 0.1-2 μm, for example, and are formed in depth to the interface part of the semiconductor layer 3 and the semiconductor layer 4.