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Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND MANUFACTURING METHOD THEREFOR
Document Type and Number:
Japanese Patent JP2013168599
Kind Code:
A
Abstract:

To provide a semiconductor light-emitting device in which light leakage from a semiconductor light-emitting element is eliminated and the amount of a phosphor used can be minimized.

In the semiconductor light-emitting device including a semiconductor light-emitting element 3 mounted on a circuit board, the light-emitting surface of the semiconductor light-emitting element 3 is covered with a phosphor sheet 1. The phosphor sheet 1 has a storage modulus of 0.5 MPa or more at 25°C, and less than 0.1 MPa at 100°C. The length 2 not covered with the phosphor sheet 1 does not exceed 5 μm at the edge of the semiconductor light-emitting element 3, and the length of the phosphor sheet 1 hanging over the edge of the semiconductor light-emitting element 3 does not exceed 5 μm.


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Inventors:
SADAKUNI HIRONOBU
MATSUMURA NOBUO
YOSHIOKA MASAHIRO
Application Number:
JP2012032367A
Publication Date:
August 29, 2013
Filing Date:
February 17, 2012
Export Citation:
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Assignee:
TORAY INDUSTRIES
International Classes:
H01L33/50
Domestic Patent References:
JP2010258281A2010-11-11
JP2007103901A2007-04-19
JP2010258281A2010-11-11
JP2007103901A2007-04-19



 
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