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Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD OF MANUFACTURING THE SAME
Document Type and Number:
Japanese Patent JP2012069577
Kind Code:
A
Abstract:

To solve such a problem that it is difficult to simply mass-produce an LED light-emitting device having excellent light emission efficiency and light emission characteristics (one binned) in a conventional production method of the LED light-emitting device.

The LED light-emitting device 10 is formed by mounting LEDs 3 on a circuit board 2, forming a light scattering layer 7 on side surfaces of the LEDs 3, and forming a phosphor layer 5a on the upper surfaces of the LEDs 3 and the light scattering layer 7. The upper surfaces of the LEDs 3 and the upper surface of the light scattering layer 7 form almost the same surface.


Inventors:
ARAI MAKOTO
Application Number:
JP2010211000A
Publication Date:
April 05, 2012
Filing Date:
September 21, 2010
Export Citation:
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Assignee:
CITIZEN ELECTRONICS
CITIZEN HOLDINGS CO LTD
International Classes:
H01L33/52; H01L33/50
Domestic Patent References:
JP2005277227A2005-10-06
JP2007019096A2007-01-25
JP2007317787A2007-12-06
JP2009071005A2009-04-02
JP2007059492A2007-03-08
Foreign References:
WO2010027672A22010-03-11
WO2009066430A12009-05-28
Attorney, Agent or Firm:
Gojong Hiroaki