Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2023012226
Kind Code:
A
Abstract:
To provide a semiconductor light emitting element with a monolithic structure that can emit laser beams with mutually different wavelengths while suppressing lattice mismatch.SOLUTION: A semiconductor light emitting element according to an aspect has a first conductive cladding layer, an insulating layer that divides the first conductive cladding layer, m (m is an integer of two or more) light emitting layers that are stacked on the first conductive cladding layer divided by the insulating layer and emit laser light at different wavelengths, m second conductive cladding layers that are stacked on the m light emitting layers, and a polycrystalline semiconductor layer that is stacked on the insulating layer.SELECTED DRAWING: Figure 1
Inventors:
OKUMURA TADATSUGU
FUKAI HARUNORI
SUDA NOBORU
SAKAI SHIGETA
FUKAI HARUNORI
SUDA NOBORU
SAKAI SHIGETA
Application Number:
JP2021115747A
Publication Date:
January 25, 2023
Filing Date:
July 13, 2021
Export Citation:
Assignee:
USHIO ELECTRIC INC
International Classes:
H01S5/026; H01S5/22; H01S5/343
Attorney, Agent or Firm:
Konishi Megumi
Shigeyuki Nagaoka
Shigeyuki Nagaoka
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