SEMICONDUCTOR LIGHT EMITTING ELEMENT AND METHOD FOR MANUFACTURING SEMICONDUCTOR LIGHT EMITTING ELEMENT

Japanese Patent JP2023020627

A

To improve the reliability of semiconductor light emitting elements.SOLUTION: A semiconductor light emitting element 10 has an n-type semiconductor layer 24 comprising an n-type AlGaN-based semiconductor material, an active layer 26 on the n-type semiconductor layer 24 and comprising an AlGaN-based semiconductor material, a p-type semiconductor layer 28 on the active layer 26, a p-side contact electrode 30 including an Rh layer contacting with the top surface 28a of the p-type semiconductor layer 28, a p-side electrode coating layer 32 including a Ti layer, an Rh layer, and a TiN layer, which are in contact with the top surface 30a and the side surface 30b of the p-side contact electrode 30 and stacked in order, a dielectric coating layer having a connection aperture provided on the p-side electrode coating layer 32 and covering the p-side electrode coating layer 32 at a location different from the connection aperture; and a p-side current diffusion layer 40 which is connected to the p-side electrode coating layer 32 at the connection aperture.SELECTED DRAWING: Figure 1

NIWA NORITAKA
INAZU TETSUHIKO
AIDA HARUHISA

JP2021126105A

February 09, 2023

July 30, 2021

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NIKKISO CO LTD

H01L33/32; H01L21/28; H01L21/285; H01L33/40

JP6867536B1	2021-04-28
JP2018142687A	2018-09-13
JP2021072376A	2021-05-06
JP2019079982A	2019-05-23
JP2007158132A	2007-06-21
JP2021034473A	2021-03-01
JPH09205179A	1997-08-05

WO2014068965A1	2014-05-08
WO2010125810A1	2010-11-04
WO2011077748A1	2011-06-30
US20180212109A1	2018-07-26

Morishita Kenki

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