To provide a semiconductor light-emitting device which improves electrostatic breakdown resistance while avoiding performance degradation and optical output degradation in light-emitting operation.

A semiconductor light-emitting device includes: a support substrate 30; a semiconductor film 10 including a light-emitting layer 12; a surface electrode provided on a light extraction surface side; and a light reflection layer 20 provided between the support substrate and the semiconductor film. The surface electrode includes: a first electrode piece 43 making ohmic contact with the semiconductor film; and a second electrode piece 41 electrically connected to the first electrode piece and making Schottky contact with the semiconductor film. A reflection electrode formed in the light reflection layer includes: third electrode piece 21D arranged not to overlap with the first electrode piece and making ohmic contact with the semiconductor film; and a fourth electrode piece electrically connected to the third electrode piece, making ohmic contact with the semiconductor film, and arranged to face the second electrode piece. The shortest distance between the first electrode piece and the fourth electrode piece within a main surface direction of the semiconductor film is made lager than the shortest distance between the first electrode piece and the third electrode piece in the same direction.