To provide a semiconductor light-emitting device having high-power which emits light of a far-infrared region at over 10 μm.
A semiconductor light-emitting device according to an embodiment is a semiconductor light-emitting device which emits light depending on energy relaxation of electrons among sub-bands of a plurality of quantum wells comprises: an active layer which is formed in a stripe shape extending in a direction parallel with an emission direction of the emitted light and which includes the plurality of quantum wells for emitting the emitted light of a wavelength at over 10 μm; and a pair of clad layers which are provided at least above and below the stripe-shaped active layer along a longer side of the active layer and each of which has a refraction index lower than that of the active layer. At least a part of the clad layers has optical absorption at the wavelength of the emitted light, which is relatively lower than that of another part including a material which includes GaAs and lattice-matched with the active layer.
YABUHARA HIDEHIKO
| JPH0794822A | 1995-04-07 | |||
| JP2005521266A | 2005-07-14 | |||
| JP2005039045A | 2005-02-10 | |||
| JP2007517411A | 2007-06-28 |
JPN6014033853; Ｍａｔｔｉａｓ Ｂｅｃｋ，ｅｔ．ａｌ．: 'Ｂｕｒｉｅｄ Ｈｅｔｅｒｏｓｔｒｕｃｔｕｒｅ Ｑｕａｎｔｕｍ Ｃａｓｃａｄｅ Ｌａｓｅｒｓ ｗｉｔｈ ａ Ｌａｒｇｅ Ｏｐｔｉｃａｌ Ｃａｖｉｔｙ Ｗａｖｅｇｕｉｄｅ' ＩＥＥＥ ＰＨＯＴＯＮＩＣＳ ＴＥＣＨＮＯＬＯＧＹ ＬＥＴＴＥＲＳ Ｖｏｌ．１２， Ｎｏ．１１, 200011, ｐｐ．１４５０-１４５２
JPN7014003526; Ｒａｆｆａｅｌｅ Ｃｏｌｏｍｂｅｌｌｉ，ｅｔ．ａｌ．: 'Ｆａｒ-ｉｎｆｒａｒｅｄ ｓｕｒｆａｃｅ-ｐｌａｓｍｏｎ ｑｕａｎｔｕｍ-ｃａｓｃａｄｅ ｌａｓｅｒｓ ａｔ ２１．５ｕｍ ａｎｄ ２４ｕｍ ｗａｖｅｌｅｎｇｔｈｓ' ＡＰＰＬＩＥＤ ＰＨＹＳＩＣＳ ＬＥＴＴＥＲＳ Ｖｏｌ．７８， Ｎｏ．１８, 20010430, ｐｐ．２６２０-２６２２