Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP3726036
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a high reliability semiconductor light-emitting device having less change due to aging.
SOLUTION: In the semiconductor light-emitting device, where a one conductivity-type semiconductor layer 2, an inverse conductivity-type semiconductor layer 3, and an inverse conductivity-type electrode 4 are successively formed on a substrate 1, a one conductivity-type electrode 5 is formed on the back side of the substrate 1, and further the inverse conductivity-type semiconductor layer 3 is composed by laminating at least a light-emitting layer 3a, having an atomic composition of (Ga1-XAlX)As and a cladding layer 3b which has an atomic composition of (Ga1-YAlY)As, the film thickness of the light-emitting layer 3a is set to 0.38 μm or less for prescribing to 0.15≤X≤0.3, 0.2≤Y≤0.3, Y/X≤1.18.
Inventors:
Tetsuhiro Osaki
Application Number:
JP2001161507A
Publication Date:
December 14, 2005
Filing Date:
May 29, 2001
Export Citation:
Assignee:
Kyocera Corporation
International Classes:
H01L33/20; H01L33/30; H01L33/40; (IPC1-7): H01L33/00
Domestic Patent References:
| JP10275930A | ||||
| JP2000138398A | ||||
| JP5037011A | ||||
| JP1212483A |