Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
Japanese Patent JPH02122678
Kind Code:
A
Abstract:
PURPOSE:To improve the quality and to reduce manpower by arranging a check area composed of impurity diffused layer having opposite polarity from that of a substrate in parallel with light emission area arrays thereby removing defective light emission pattern easily and reliably through electrical conduction check. CONSTITUTION:Light emission areas 2-1 to 2-N composed of P-type diffused layer having junction depth of 2-5mum are formed on a compound semiconductor substrate 1 composed of N<+>-GaAsP, and a check area 3 having polarity identical to that of the light emission area arranged in parallel and in adjacent to the array of the light emission areas 2-1 to 2-N is also provided. Light emission pattern is checked through inspection of conductivity between the light emission area and the check area. Good light emission area, e.g., 2-1, is insulated from the check areas 3-1, 3-2 and thereby it is in open state, but the defective light emission area 2-2 is electrically connected with the check area 3-1. The interval between the light emission area and the check area is set to be approximately same as the interval between the light emission areas.
Inventors:
YOSHIDA HIROSHI
Application Number:
JP27783388A
Publication Date:
May 10, 1990
Filing Date:
November 01, 1988
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L33/08; H01L33/24; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Shin Uchihara