Title:
SEMICONDUCTOR LIGHT EMITTING DEVICE
Document Type and Number:
Japanese Patent JPH04107885
Kind Code:
A
Abstract:
PURPOSE:To prevent the rupture of electrodes by providing electrodes along the directions of the (001) and (0-1-1) planes of a silicon substrate from the top of an island-shaped GaAs film on the (100) plane of the silicon substrate or on the plane inclined from the (100) plane to a (011) plane. CONSTITUTION:A silicon substrate 1 is constituted of a single crystal substrate which is cut out to permit a (100) plane or a plane equivalent to the (100) plane inclined by 2<+>, for example, to the bottom of a (001) plane to be the surface. First GaAs areas 3 and second GaAs substrates 4 are formed on the silicon substrate 1 so as to be lined up along the directions of the (011) plane and a (0-1-1) plane, a surface side electrode layer 5 is formed from the top of the first GaAs area 3 to the top of the second GaAs area 4 and the surface side electrode layer 5 is formed along the directions of the (011) plane and the (0-1-1) plane of the silicon substrate 1. Thus, a facet is provided on the edge plane of a GaAs grown layer obtained by selective growth and the rupture of the surface side electrode layer 5 is prevented.
Inventors:
BITO YOSHIFUMI
Application Number:
JP22694590A
Publication Date:
April 09, 1992
Filing Date:
August 28, 1990
Export Citation:
Assignee:
KYOCERA CORP
International Classes:
H01L21/205; H01L33/16; H01L33/20; H01L33/30; H01L33/34; H01L33/40; H01L33/62; (IPC1-7): H01L21/205; H01L33/00