Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JPS57111076
Kind Code:
A
Abstract:
PURPOSE:To enable to efficiently pick out a beam of light by a method wherein an ordinary low resistance electrodes are arranged in a small island type in a light emitting section, and these electrodes are electrically connected using a transparent electrode. CONSTITUTION:A light-emitting section 9 is formed by selectively diffusing Zn on an N-GaAs 2, an N-GaAlAs layer 3 and a grown wafer on an N-GaAs substrate 1. An insulating SiO2 film 6 is provided on the outer part from the circumference of the light-emitting part 9, and then, as a P-electrode (Au/Zn/ Au), the inside of the light-emitting part is formed into a small island type and the SiO2 film is formed into the size which can be used as a bonding pad. Then, a transparent electrode 11 is attached in order to electrically connect the island- type electrode 10 and the bonding pad section 10' located on the circumference of the light-emitting part. As the part consisted of the transparent electrode 11 and a crystal 5 has a high resistance, current runs mainly through the small and island type electrode 10, and the light can be picked out through the transparent electrode.
Inventors:
YAMAGOSHI SHIGENOBU
TAKEUCHI YASUO
KIN KATSUYOSHI
TAKEUCHI YASUO
KIN KATSUYOSHI
Application Number:
JP18687380A
Publication Date:
July 10, 1982
Filing Date:
December 26, 1980
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L33/14; H01L33/30; H01L33/38; H01L33/40; (IPC1-7): H01L33/00