Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT, SEMICONDUCTOR LIGHT-EMITTING DEVICE USING THE SAME AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3130292
Kind Code:
B2
Abstract:
PROBLEM TO BE SOLVED: To provide a flip-chip semiconductor light-emitting element of a structure, wherein light on its way from a luminous layer to a p side electrode is made to be reflected to the side of a light extracting surface with high reflection efficiency for obtaining a high luminous efficiency.
SOLUTION: A semiconductor laminated film, consisting of n-type and p-type layers is formed on a transparent sapphire substrate 1a and n side and p side electrodes 2 and 3 respectively are provided on the surface on the same side, which faces opposite the substrate 1a of the laminated film. The electrode 3 is formed into a laminated material consisting of an ohmic layer 3a, which is ohmic connectable to p side semiconductor laminated film and consists of a metallic material, and a reflecting layer 3b, which is made a laminate on this layer 3a, consisting of a silver white-colored and high-reflectivity metallic material, such as Al, Ag and Zn.
Inventors:
Tomio Inoue
Kenichi Koya
Norio Yamashita
Kenichi Koya
Norio Yamashita
Application Number:
JP28762398A
Publication Date:
January 31, 2001
Filing Date:
October 09, 1998
Export Citation:
Assignee:
Matsushita Electronics Industrial Co., Ltd.
International Classes:
H01L33/06; H01L33/32; H01L33/42; H01L33/56; H01L33/62; (IPC1-7): H01L33/00
Domestic Patent References:
| JP57106087A | ||||
| JP6314825A | ||||
| JP669546A | ||||
| JP61220344A | ||||
| JP9232632A | ||||
| JP864871A | ||||
| JP5159618A |
Attorney, Agent or Firm:
Fumio Iwahashi (2 others)