PURPOSE: To obtain an element having a current stricture layer at one time epitaxial growth by a method wherein an impurity of reverse conductivity type is diffused from the opposite side of a side, wherein epitaxial growth is performed, of a semiconductor substrate, while a part of the substrate is made to remain, and this diffused region is made to reach a part of the epitaxial layer.

CONSTITUTION: A recess region coming into a diffused region 21 is formed at the center of a non diffused region 22 of the N type GaAs substrate 20 composed of the regions 21 and 22. Next, over the entire surface including it, a P type Ga0.7Al0.3As clad layer 23 and a Ga0.95Al0.05As active layer 24 are laminated and epitaxially grown, and the active layer 24 in the recess region is used as a light emitting region. Then, an N type Ga0.7Al0.3As clad layer 25 and an N type Ga0.85Al0.15As cap layer 26 are epitaxially grown on the layer 24, while the surfaces are flatted. Thereafter, the P type impurity is diffused from the back surface side of the substrate 20, this is made to reach the position wherein the recess region exists, and a part of the epitaxial grown side is contrived to remain. Thus, the region 22 is used as the current stricture layer.