To provide a semiconductor light emitting device which focuses optical characteristics of a sealing material in the semiconductor light emitting device, has light distribution properties which realize a narrow radiation region where light is properly condensed, and adopts a molding method with high manufacturing efficiency, and to provide a manufacturing method of the semiconductor light emitting device.
A semiconductor light emitting device 10 incudes: a reflector package base material 2; a semiconductor light emitting element 1 mounted in a recessed space of the reflector package base material 2; and a sealing material 3 which seals the semiconductor light emitting element 1 and contains a polar group containing acrylic resin. A light emitting surface of the sealing material 3 is recessed so as to form a curved surface and the curvature radius of the recessed light emitting surface is set to 1.8 to 4.5 times of a length of a diameter or a short side in a plane view of the light emitting surface.
KOITO NAOKI
MOROOKA NAOYUKI
| JP2003249689A | 2003-09-05 | |||
| JP2011128225A | 2011-06-30 | |||
| JP2003053881A | 2003-02-26 | |||
| JPH11202103A | 1999-07-30 | |||
| JP2007019459A | 2007-01-25 | |||
| JP2007165803A | 2007-06-28 | |||
| JP2006332262A | 2006-12-07 | |||
| JP2005123588A | 2005-05-12 | |||
| JP4010299B2 | 2007-11-21 | |||
| JP2007180339A | 2007-07-12 | |||
| JP2003249689A | 2003-09-05 | |||
| JP2011128225A | 2011-06-30 | |||
| JP2003053881A | 2003-02-26 | |||
| JPH11202103A | 1999-07-30 | |||
| JP2007019459A | 2007-01-25 |
Naosuke Miyamae