To provide a semiconductor light emitting element of an internal stripe structure wherein an end face window structure can be formed with a good reproducibility and which can provide a reliability high in a range from a low output to a high output.

An n-GaAs buffer layer 12, an n-In0.49Ga0.51P lower clad layer 13, an n- or i-Inx3Ga1-x3As1-y3Py3 lower optical waveguide layer 14, an InxGa1-xAs1-yPy quantum well active layer 15, an SCH layer as a p- or i-Inx3 Ga1-x3As1-y3Py3 upper optical waveguide layer 16, a p-In0.49Ga0.51P upper first clad layer 17, a GaAs etching stop layer 18, an n-In0.49Ga0.51P current-path narrowing layer 19, and a GaAs gap layer 20 are sequentially grown on an n-GaAs substrate 11. The SCH layer in the vicinity of end faces of a resonator is removed on the laminate with use of a double mask having a silicon oxide mask 21 opened in an interior stripe groove region and a resist mask 23 opened in the vicinity of the end faces of the resonator, on which a re-grown layer is formed to form an end face window structure having no deviation from an interior stripe groove.