SEMICONDUCTOR LIGHT-EMITTING ELEMENT AND METHOD OF MANUFACTURING THE SAME

Japanese Patent JP2015149342

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PROBLEM TO BE SOLVED: To enhance the light emission efficiency compared with the conventional art, in a semiconductor light-emitting element whose peak light emission wavelength formed by growing an active layer in a c-axis direction is 530 nm or more.SOLUTION: A semiconductor light-emitting element with a peak light emission wavelength of 530 nm or more, comprises: an n-type semiconductor layer; a superlattice layer formed on an upper layer of the n-type semiconductor layer, and consisting of a laminate of a plurality of nitride semiconductors having different bandgaps; an active layer formed on an upper layer of the superlattice layer; and a p-type semiconductor layer formed on an upper layer of the active layer. The active layer is obtained by laminating a first layer configured by InGaN (0≤X1≤0.01), a second layer configured by InGaN (0.2