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Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP2014154727
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting element that has high luminous efficiency and is practical.SOLUTION: There is provided a semiconductor light-emitting element including first to third metal layers, a semiconductor light-emitting portion, and an insulating portion. The semiconductor light-emitting portion is spaced apart from the first metal layer in a first direction. The second metal layer is provided between the first metal layer and the semiconductor light-emitting portion, and is light reflective. The second metal layer includes a contact metal portion in contact with the semiconductor light-emitting portion and a peripheral metal portion including an outer edge portion around the contact metal portion. The third metal layer is provided between the first metal layer and the semiconductor light-emitting portion, and is light reflective. The third metal layer includes an inner-side portion, an intermediate portion that overlaps with the semiconductor light-emitting portion but does not overlap with the outer edge portion, and an outer-side portion outside the semiconductor light-emitting portion. The insulating portion is provided between the intermediate portion and the semiconductor light-emitting portion, between the inner-side portion and the semiconductor light-emitting portion, and between the outer-side portion and the first metal layer.

Inventors:
KATSUNO HIROSHI
MIKI SATOSHI
ITO TOSHIHIDE
NUNOUE SHINYA
Application Number:
JP2013023653A
Publication Date:
August 25, 2014
Filing Date:
February 08, 2013
Export Citation:
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Assignee:
TOSHIBA CORP
International Classes:
H01L33/32
Domestic Patent References:
JP2012182276A2012-09-20
JP2008294482A2008-12-04
JP2011066053A2011-03-31
JP2012244165A2012-12-10
Attorney, Agent or Firm:
Masahiko Hiugaji