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Title:
SEMICONDUCTOR LIGHT-EMITTING DEVICE
Document Type and Number:
Japanese Patent JP2017208400
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device which enables the increase in breakdown voltage.SOLUTION: A semiconductor light-emitting device 1 comprises: a substrate 2; an epitaxial layer 6 formed on the substrate 2 and including an n-type first semiconductor layer 7, a light-emitting layer and a p-type second semiconductor layer 9 which are laminated in this order from a side of the substrate 2; a first pad electrode 17 disposed on the first semiconductor layer 7; a second pad electrode 18 disposed on the second semiconductor layer 9; and a high-resistance layer 31 having a resistance value higher than that of the second semiconductor layer 9, which is selectively provided in a region between the second pad electrode 18 and the second semiconductor layer 9. The high-resistance layer 31 includes a permission part 33 which allows a first current path Prunning through an opposing portion 32 opposed to the second pad electrode 18 in the second semiconductor layer 9 and the second pad electrode 18 to be formed.SELECTED DRAWING: Figure 2

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Inventors:
FUJIMORI TAKAO
Application Number:
JP2016098537A
Publication Date:
November 24, 2017
Filing Date:
May 17, 2016
Export Citation:
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Assignee:
ROHM CO LTD
International Classes:
H01L33/38
Domestic Patent References:
JP2012019140A2012-01-26
JP2006100569A2006-04-13
JP2003282946A2003-10-03
JP2008034822A2008-02-14
JP2008135554A2008-06-12
JP2010080542A2010-04-08
JP2011517100A2011-05-26
JP2002064221A2002-02-28
Foreign References:
KR20120078381A2012-07-10
CN103078027A2013-05-01
Attorney, Agent or Firm:
Patent Business Corporation Ai Patent Office



 
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