Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JP3192560
Kind Code:
B2
Abstract:
PURPOSE: To provide a semiconductor light-emitting element with an element structure which can be applied to both a semiconductor diode and a semiconductor laser where an electrode can be formed and the resonator of the semiconductor laser are formed easily and a light emitting region is constituted by a high quality nitride semiconductor thin film.
CONSTITUTION: GaP substrate 100 which is a conductive substrate is used as a substrate for forming a semiconductor lamination structure 110 including a light-emitting region and a nitride semiconductor layer 102 or 106 for constituting the semiconductor lamination structure 110a is formed on (111) face of the GaP substrate with 6-fold axis of symmetry as in wurtzite crystal.
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Inventors:
Shinji Kaneiwa
Application Number:
JP25374094A
Publication Date:
July 30, 2001
Filing Date:
October 19, 1994
Export Citation:
Assignee:
Sharp Corporation
International Classes:
H01L33/04; H01L33/12; H01L33/16; H01L33/32; H01L33/36; H01S5/00; H01S5/323; (IPC1-7): H01L33/00; H01S5/323
Domestic Patent References:
| JP8116092A | ||||
| JP2288371A | ||||
| JP5243614A |
Attorney, Agent or Firm:
Shusaku Yamamoto