Title:
Semiconductor light emitting element
Document Type and Number:
Japanese Patent JP6067056
Kind Code:
B2
Abstract:
A semiconductor light-emitting device (100) is provided. The semiconductor light-emitting device (100) may include a light-emitting structure (135), an electrode (115), an ohmic layer (150), an electrode layer (160), an adhesion layer (170), and a channel layer (140). The light-emitting structure (135) may include a compound semiconductor layer. The electrode (115) may be disposed on the light-emitting structure (135). The ohmic layer (150) may be disposed under the light-emitting structure (135). The electrode layer (160) may include a reflective metal under the ohmic layer (150). The adhesion layer (170) may be disposed under the electrode layer (160). The channel layer (140) may be disposed along a bottom edge of the light-emitting structure (135).
Inventors:
John, Wanhee
Lee, Sanyoru
Sung, Juno
Oh, Chang Hoon
Choi
Choi, Kwanki
Lee, Sanyoru
Sung, Juno
Oh, Chang Hoon
Choi
Choi, Kwanki
Application Number:
JP2015098430A
Publication Date:
January 25, 2017
Filing Date:
May 13, 2015
Export Citation:
Assignee:
LG Innotek Co., Ltd
International Classes:
H01L33/36
Domestic Patent References:
| JP2008294482A | ||||
| JP2008518436A | ||||
| JP2006100500A | ||||
| JP2006140297A | ||||
| JP2009188240A | ||||
| JP2007158132A |
Attorney, Agent or Firm:
Makoto Ono
Kenkyo Kanayama
Kazuki Shigemori
Hidehiko Ichikawa
Yoshikazu Iwase
Kenkyo Kanayama
Kazuki Shigemori
Hidehiko Ichikawa
Yoshikazu Iwase