Title:
SEMICONDUCTOR LIGHT EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH01313975
Kind Code:
A
Abstract:
PURPOSE:To improve far field pattern by arranging nonreflective films on non-light emitting end-surfaces parallel to the light emitting direction of a light emitting diode. CONSTITUTION:Nonreflection films 11, 12 are arranged on non-light emitting end-surfaces 9, 10. The light which has leaked from an active layer 4 into clad layers 2, 3 is to be reflected by non-light emitting end-surfaces 9, 10. However, by the effect of the nonreflection films 11, 12, said light is not reflected but introduced outward, so that unnecessary light does not mix in the light radiated from the end-surface of a light emitting part 5. As the reflectionless films 11, 12, a reflectionless film composed of calcium fluoride of lambda/4 (lambda = light emitting wavelength) = 2500Angstrom , for example, is used. Thereby, a far field pattern in the direction parallel to the active layer is improved.
Inventors:
YAMAMOTO YOSHIHIKO
Application Number:
JP14355288A
Publication Date:
December 19, 1989
Filing Date:
June 13, 1988
Export Citation:
Assignee:
FUJITSU LTD
International Classes:
H01L33/10; H01L33/30; H01L33/46; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Aoki Akira (4 outside)