PURPOSE: To enable a semiconductor light-emitting element to be easily controlled in a manufacturing process and improved in performance by a method wherein a first conductivity type semiconductor substrate and a first conductivity type second semiconductor layer are electrically connected together.

CONSTITUTION: An N-type InP block layer 2, a P-type InP buffer layer 3, an InGaAsP active layer 4, and an N-type InP clad layer 5 are laminated through a first epitaxial growth on a P-type InP substrate 1 on which a mesa stripe 10 has been formed. The InGaAsP active layer 4 and the N-type InP clad layer 5 are selectively removed, and an N-type InP buried layer 6 is made to grow through a second epitaxial growth. A current is effectively injected into an oscillation region 10 from the mesa stripe 9 of the P-type InP substrate 1 passing through the P-type InP buffer layer 3. A current blocking region 11 is made to serve as a thyristor of a PNPQN structure which contains the InGaAsP active layer 4. Therefore, it is high in ON-state voltage and can be kept in an OFF-state at a high temperature operation or at a high output operation, so that a semiconductor light emitting element can be kept high in oscillation efficiency.