Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH04252083
Kind Code:
A
Abstract:
PURPOSE:To improve the point of a conventional problem of a rise of a series resistance, which is generated in the case structures consisting of a multilayer film having a large difference between forbidden band widths are respectively provided in current- carrying parts holding both sides of a the luminous layer of a semiconductor light- emitting element between them and having a large forbidden band width. CONSTITUTION:In a semiconductor light-emitting element constituted by a method wherein first semiconductor layers (first and second conductive layers having the minimum forbidden band at a point GAMMA) 11 and 15, whose minimum forbidden band widths exist at the point GAMMA, and second semiconductor layers (first and second conductive layers having the minimum forbidden band at a non-F point) 12 and 14, whose minimum forbidden band widths exist at a point other than the point GAMMA, are alternately laminated on a current conducting layer, semiconductor insertion layers 18 and 19, whose forbidden band widths are formed into a step form at equal intervals, are respectively provided in the interfaces between the above first and second semiconductor layers. The series resistance of the element is reduced. Accordingly, the heat generation of the element is also little, an increase in the integration of the element is possible and the element is suitable for a light source element for optical communication and an optical information processing.
Inventors:
ASATA SUSUMU
Application Number:
JP818291A
Publication Date:
September 08, 1992
Filing Date:
January 28, 1991
Export Citation:
Assignee:
NEC CORP
International Classes:
H01L33/10; H01L33/30; H01S5/183; H01S5/323; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Shin Uchihara