PURPOSE: To realize a high light output and a reduction in the calorific value of individual light emitting element in a semiconductor light emitting element formed by a light emitting element to a high density on a substrate.

CONSTITUTION: A buffer layer 3 and reflection layer 4 are formed on a substrate 2; a first clad layer 5, a light emitting layer 6, a second clad layer 7 consisting of a low concentration clad layer 7a with the electric conductivity almost equal to that of other semiconductor crystal layers and a high concentration clad layer 7b with the electric conductivity higher than other semiconductor crystal layer; and a contact layer 8 which is sequentially laminated by using MOCVD method or MBE method in the construction of this element. By using this construction, the element resistance between the electrodes 9 and 10 is reduced, the calorific value of the light emitting element 1a can be reduced, and any decrease in light emitting output can be prevented because the electric conductivity of the clad layers 5 and 7a near the light emitting layer 6 is appropriate.