Title:
SEMICONDUCTOR LIGHT-EMITTING ELEMENT
Document Type and Number:
Japanese Patent JPH08288547
Kind Code:
A
Abstract:
PURPOSE: To provide a new structure of an infrared LED, which can obtain a high output in a high-current region.
CONSTITUTION: In an infrared LED having a double hetero(DH) structure, hetero double layers, which are adjacent to DH structures (3, 4 and 5) and consist of semiconductor layers (10a and 10b) which are different from each other, are laminated by a prescribed number to constitute a reflective layer 10 and the density of impurities of each hetero double layer constituting this layer 10 is set at a prescribed value, whereby the effect of heat generation is inhibited also in a high-current region and the layer 10 acts so as to function effectively.
Inventors:
KONDOU KATSUAKI
Application Number:
JP8510695A
Publication Date:
November 01, 1996
Filing Date:
April 11, 1995
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
H01L33/10; H01L33/12; H01L33/14; H01L33/16; H01L33/30; (IPC1-7): H01L33/00
Attorney, Agent or Firm:
Hidekazu Miyoshi (3 outside)
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