PURPOSE: To provide a semiconductor light emitting element with a small light emission diameter and a high light emission efficiency.

CONSTITUTION: A multilayer reflection film layer 2 consisting of a semiconductor, a lower clad layer 3, an activated layer 4, and an upper clad layer 5 are laminated on a semiconductor substrate 1 successively. A projecting part 6 such as a truncated cone and a pyramid cone is provided on the upper surface of the upper clad layer 5 and an electrode 9 is formed on the surface of the upper clad layer 5 so that a light emission window 8 is opened on the top surface of the projecting part 6, thus forming a light reflection surface 11 according to an electrode 9 on an inclined surface 7 of the outer-periphery surface of the projecting part 6. One part of light which is irradiated from the activated layer 4 is subjected to multiple reflection between the multilayer reflection film layer 2 and the light reflection surface 11 and then is applied to the outside from the light emission window 8.