To effectively make use of layers constituting a magnetic storage element in a peripheral circuit part.
A semiconductor magnetic storage device includes a semiconductor substrate on which a cell part including a cell transistor and a peripheral circuit part including a peripheral transistor are formed. The device further includes a magnetic storage element that is disposed in the cell and includes a lower electrode, an inter-electrode layer formed on the lower electrode, and an upper electrode formed on the inter-electrode layer. The device further includes a structure that is disposed in the peripheral circuit part and includes a first layer forming the lower electrode, a second layer forming the inter-electrode layer, and a third layer forming the upper electrode. The device further includes first and second plugs that are electrically connected to the first layer. The first layer functions as wiring that electrically connects the first plug and the second plug.
Yasukazu Sato
Yasushi Kawasaki
Takeshi Sekine
Akaoka Akira
Jie Yamanoi