Title:
SEMICONDUCTOR MANUFACTURE DEVICE AND MANUFACTURE OF SEMICONDUCTOR
Document Type and Number:
Japanese Patent JP2934565
Kind Code:
B2
Abstract:
PURPOSE: To prevent unnecessary materials such as reaction products from invading into a substrate supporting surface by providing a substrate supporting means with a pocket communicating with an external decompressing means and assigning an inactive gas outflowing hole around the pocket, so that inactive gas goes out of it.
CONSTITUTION: While the main surface 14 of a semiconductor substrate 8 is processed, the inactive gas supplied from an inactive gas supply device passes through a radial groove flow path 50 and an inactive gas introduction hole 52. It is jetted from an inactive gas jetting gap 31 toward a reaction chamber 6. Thus, the reaction sub-product 34 floating around a stage 10, blocked by jetted inactive gas, does not invade in between the bottom surface of the stage 10 and the semiconductor substrate 8. Even the reaction sub-product gradually sticks to the periphery of the stage 10, the reaction sub-product accumulated around the stage 10 does not invade in between the bottom surface of the stage 10 and the semiconductor substrate 8.
Inventors:
KAWADA YOSHINOBU
BANJO TOSHINOBU
BANJO TOSHINOBU
Application Number:
JP12000993A
Publication Date:
August 16, 1999
Filing Date:
May 21, 1993
Export Citation:
Assignee:
MITSUBISHI DENKI KK
International Classes:
H01L21/205; C23C16/04; C23C16/455; C23C16/458; H01L21/683; C23C16/44; (IPC1-7): H01L21/205
Domestic Patent References:
| JP6139520A | ||||
| JP2283696A | ||||
| JP5109634A |
Attorney, Agent or Firm:
Shigeaki Yoshida (2 outside)