SEMICONDUCTOR MANUFACTURING APPARATUS

Japanese Patent JP3123536

B2

PROBLEM TO BE SOLVED: To provide a semiconductor manufacturing apparatus, with which the in-plane distribution of a gas, to be attracted to wafer surface in a reaction chamber where a wafer is treated by introducing the gas, can be made uniform and the adjusting operation for the uniformity of in-plane distribution of gas can be simplified.
SOLUTION: In this semiconductor manufacturing method, wherein gas is fed into a reaction chamber and the desired treatment is perfrmed on the wafer in the reaction chamber, an annular groove 7, where gas is fed along the inside wall 2 of the reaction chamber, is formed, a gas inlet tube 4 which introduces gas into the reaction chamer 1 is communicated and connected to a plurality of places in circumferential direction of the annular groove 7. A thin plate 5, having a gas-passing microscopic hole 5a, is provided on the gas passage (gas feeding hole 6) between the annular groove 7 and the gas feeding tube 4. The gas flowing to the gas feeding hole 4 from the annular groove 7 is contracted by the microscopic hole 5a and is uniformly diffused over the whole circumference of the annular groove 7, Additionally, gas streams to the gas inlet tube 4 passing through the microscopic hole 5a and flows into the reaction chamber 1. As a result, the flow rate of gas from the plurality of gas feeding tubes 4 can be made uniform, and the in-plane distribution of gas can be made uniform on the wafer surface in the reaction chamber 1.

Ohashi Yuzuru

JP4533699A

January 15, 2001

February 23, 1999

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NEC

H01L21/302; C23C16/44; C23C16/455; H01L21/205; H01L21/3065; H01L21/31; (IPC1-7): H01L21/205; C23C16/455; H01L21/3065; H01L21/31

JP9249976A
JP1098028A
JP11329792A

Suzuki Akio

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