半導体製造装置 - APPLIED MATERIALS,INCORPORATED

Title:

半導体製造装置

Document Type and Number:

Japanese Patent JP5210809

Kind Code:

B2

Abstract:

Capacitances (308) in an impedance-matching box (306) for an RF coil (104), in a plasma deposition system for depositing a film of sputtered target material (110) on a substrate (112), can be varied during the deposition process so that the RF coil and substrate heating, and the film deposition, are more uniform due to "time-averaging" of the RF voltage distributions along the RF coil.

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Inventors:

James Van Go
John Sea. Forster

Application Number:

JP2008286640A

Publication Date:

June 12, 2013

Filing Date:

November 07, 2008

Export Citation:

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Assignee:

APPLIED MATERIALS,INCORPORATED

International Classes:

C23C14/34; H05H1/46; C23C14/54; H01F29/10; H01J37/32; H01L21/203; H01L21/302; H01L21/3065; H05H1/24

Domestic Patent References:

JP8070004A
JP8264297A
JP2101165A
JP7018433A
JP5507963A
JP4611465B2
JP4275770B2

Attorney, Agent or Firm:

Koichi Tsujii
Sadao Kumakura
Fumiaki Otsuka
Takaki Nishijima
Hiroyuki Suda
Hiroshi Uesugi
Nobuhiko Suzuki

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