Title:
半導体製造装置および半導体装置の製造方法
Document Type and Number:
Japanese Patent JP7005381
Kind Code:
B2
Abstract:
Provided is a semiconductor-manufacturing apparatus that forms a plated film having a highly homogeneous thickness on a target surface of a semiconductor wafer through electroless plating. A semiconductor-manufacturing apparatus forms plated films on target surfaces of a plurality of wafers held by a carrier capable of holding the wafers. The semiconductor-manufacturing apparatus includes the following: a rectification mechanism including a rectification plate having a plurality of through-holes, the rectification mechanism being held by the carrier in such a manner that the rectification plate faces the target surface of each wafer; a bath in which a chemical solution for forming each plated film is stored, and in which the carrier, holding the plurality of wafers and the rectification mechanism, is immersed in the chemical solution; and a driver configured to shake the carrier as immersed in the bath with a relative positional relationship between each wafer and the through-holes kept constant.
Inventors:
Ryuji Ueno
Masato Sunamoto
Masato Sunamoto
Application Number:
JP2018031785A
Publication Date:
January 21, 2022
Filing Date:
February 26, 2018
Export Citation:
Assignee:
Mitsubishi Electric Corporation
International Classes:
C23C18/31; C23C18/16; C23C18/18
Domestic Patent References:
| JP2012049363A | ||||
| JP2014189811A | ||||
| JP2008135626A | ||||
| JP2002093837A |
Attorney, Agent or Firm:
Hidetoshi Yoshitake
Takahiro Arita
Takahiro Arita
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