SEMICONDUCTOR MANUFACTURING EQUIPMENT

Title:

SEMICONDUCTOR MANUFACTURING EQUIPMENT

Document Type and Number:

Japanese Patent JPH09251981

Kind Code:

A

Abstract:

To enhance usage efficiency of process gas under a decompressed atmosphere of an etching device, etc., and reduce production cost by a method wherein the process gas is supplied to the interior of a vacuum bath for discharging the inside and decompressing and a part of exhaust gas is recirculated from the exhaust side to the interior of the vacuum bath.

A nozzle incorporated into an anode electrode 103 in a vacuum bath 101 is connected to a gas bomb 111 being a supply source of process gas, and the exhaust side 105a of a turbo-molecule pump connecting with the vacuum bath 101 is connected with a dry pump 106. Further, in the intermediate side of a recirculation line 107 provided between the exhaust side 105a of the turbo- molecule pump and the vacuum bath 101, a valve 108 and a filter 113 are disposed. A part of the process gas discharged by a turbo-molecule pump 105 from inside of the vacuum bath 101 is returned to the vacuum bath 101 through the recirculation line 107. A ratio of this process gas recirculated is adjusted by the degree of opening of the valve 108.

Inventors:

KURIHARA KAZUAKI
SEKINE MAKOTO
OKUMURA KATSUYA

Application Number:

JP5797096A

Publication Date:

September 22, 1997

Filing Date:

March 14, 1996

Export Citation:

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Assignee:

TOSHIBA CORP

International Classes:

B01J3/02; C23C16/50; C23F4/00; H01L21/203; H01L21/205; H01L21/302; H01L21/3065; (IPC1-7): H01L21/3065; B01J3/02; C23C16/50; C23F4/00; H01L21/203; H01L21/205

Attorney, Agent or Firm:

Takehiko Suzue

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