Title:
SEMICONDUCTOR MATERIAL
Document Type and Number:
Japanese Patent JPS60107823
Kind Code:
A
Abstract:
PURPOSE:To obtain a heat-resistant semiconductor material, a p type or an n type thereof is controlled easily, by utilizing a set or plural sets of element pairs forming molecules in air or a molecule-like union in a semiconductor. CONSTITUTION:A set or plural sets of element pairs of an alkaline metal such as Li and halogen: an alkaline earth metal such as Mg and halogen: a IIIB group such as Al and halogen or O: a transition metal such as Mn and O: Cu, Zn and O: a VI group such as Se and O are added to a semiconductor element, the sum total of Ge, SiC, etc. as principal ingredients therein occupies 50atom% or higher and cut bonding hands thereof are terminated by H. The amount of each element added of the element pairs is brought to 30% or higher of the total amount of addition at that time. According to the method, a p type and an n type can be controlled stably by adding these element pairs and the mobility and life of carriers can be controlled independently of the control of the p type and the n type even in an irregular matrix semiconductor such as amorphous structure.
Inventors:
UDA TAKESHI
MARUYAMA EIICHI
MURAYAMA YOSHIMASA
KATAYAMA YOSHIFUMI
SHIMADA JIYUICHI
MARUYAMA EIICHI
MURAYAMA YOSHIMASA
KATAYAMA YOSHIFUMI
SHIMADA JIYUICHI
Application Number:
JP21397883A
Publication Date:
June 13, 1985
Filing Date:
November 16, 1983
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L31/04; H01L21/205; H01L27/146; (IPC1-7): H01L27/14; H01L31/04
Attorney, Agent or Firm:
Akio Takahashi