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Title:
SEMICONDUCTOR MEMORY DEVICE AND MANUFACTURE THEREOF
Document Type and Number:
Japanese Patent JP3503666
Kind Code:
B2
Abstract:

PURPOSE: To obtain a method of manufacturing a semiconductor memory device, wherein the semiconductor memory device can be effectively protected against an adverse effect of moisture from a flattening insulating film, and a ground layer where a metal wiring layer is formed is capable of being enhanced in flatness without increasing manufacturing processes in number.
CONSTITUTION: A semiconductor memory device is equipped with NMOS transistors 13 and 14, a silicon oxide film 45 (SiH4/BPSG reflow film) formed as a first flattening insulating film, a TFT 15 formed on the silicon oxide film 45, a silicon oxide film 57 (O3/TEOS/BPSG reflow film) formed as a second flattening insulating film, and a laminated aluminum wiring 17 formed on the silicon oxide film 57. The first flattening insulating film (silicon oxide film 45) is reduced in thickness to an irreducible minimum, and the second flattening insulating film (silicon oxide film 57) is set larger in thickness than the first flattening insulating film so as to make the best use of the flattening properties of the second flattening insulating film.


Inventors:
Yoshihara, Ikuo
Application Number:
JP1995000122935
Publication Date:
March 08, 2004
Filing Date:
April 25, 1995
Export Citation:
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Assignee:
SONY CORP
International Classes:
H01L21/3205; H01L21/316; H01L21/768; H01L21/8244; H01L23/522; H01L27/11; (IPC1-7): H01L21/8244; H01L21/316; H01L21/3205; H01L21/768; H01L27/11
Attorney, Agent or Firm:
藤島 洋一郎



 
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