To provide a semiconductor memory device which is a mixed chip of a volatile storage device and a nonvolatile storage device having excellent low power consumption and downsizing performance and capable of being applied to compact information equipment such as a mobile terminal.
A semiconductor memory device comprises: a first substrate 1; a DRAM part formed on the first substrate 1 and including a DRAM memory cell array (a capacitative element 8, a memory cell transistor 4, and the like) and a DRAM peripheral circuit (a transistor 3 for a peripheral circuit and the like); and a ReRAM part including a ReRAM memory cell array (a resistance change element 18, a memory cell transistor 13, and the like) and a ReRAM peripheral circuit (a transistor 2 for a peripheral circuit and the like). The ReRAM memory cell array is formed in a higher layer than the DRAM part. The DRAM peripheral circuit and the ReRAM peripheral circuit are regions on the first substrate 1, and formed in a region more peripheral than the DRAM memory cell array.
SHIMAKAWA KAZUHIKO
ITO OSAMU
