Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2011103323
Kind Code:
A
Abstract:
To provide a technology for reducing the rewriting current of a phase change memory.
A resistive element R of a phase change memory has a laminated structure comprising a lower electrode 121, a piezoelectric material layer 122, a barrier layer 123, a memory layer 124, and upper electrode 125. The maximum temperature reached (phase change temperature from a phase to an α phase) of the phase change material is lowered to reduce the rewriting current by utilizing an electrostrictive effect of the piezoelectric material layer 122 to apply the compressive stress to the phase change material (the memory layer 124) during the operation of a memory cell MC.
Inventors:
KUROTSUCHI KENZO
TAKAURA NORIKATSU
SASAKO YOSHITAKA
MORIKAWA TAKAHIRO
TAKAURA NORIKATSU
SASAKO YOSHITAKA
MORIKAWA TAKAHIRO
Application Number:
JP2009256978A
Publication Date:
May 26, 2011
Filing Date:
November 10, 2009
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/105; H01L27/10; H01L41/09; H01L41/18; H01L41/22; H01L41/311; H01L41/39; H01L45/00
Attorney, Agent or Firm:
Yamato Tsutsui
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