Title:
SEMICONDUCTOR MEMORY DEVICE
Document Type and Number:
Japanese Patent JP2015005316
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor memory device configured to prevent an increase in the size of a remedy and replacement circuit that replaces a page buffer defective in a normal memory cell or bit line with a defect-free page buffer, and configured to transfer data to an ECC circuit at a higher speed.SOLUTION: A data transfer unit includes a page buffer 102a to latch data of a normal bit line connected to a normal memory cell, a page buffer 102c to latch data of a parity bit line connected to a parity memory cell, and a page buffer 102b to be replaced when the page buffer 102a is defective or to be replaced when the page buffer 102c is defective. ECC Bus_1 is connected to the page buffer 102a and the page buffer 102b, and Data Bus_1 is connected to the page buffer 102a, the page buffer 102c and the page buffer 102b.
Inventors:
HIRANO MAKOTO
Application Number:
JP2013129548A
Publication Date:
January 08, 2015
Filing Date:
June 20, 2013
Export Citation:
Assignee:
SAMSUNG ELECTRONICS CO LTD
International Classes:
G11C29/00; G11C16/02; G11C16/06
Attorney, Agent or Firm:
Takashi Watanabe
Shinya Jitsuhiro
Shinya Jitsuhiro