Title:
SEMICONDUCTOR STORAGE UNIT
Document Type and Number:
Japanese Patent JP2016162475
Kind Code:
A
Abstract:
PROBLEM TO BE SOLVED: To provide a semiconductor storage unit capable of reducing power consumption.SOLUTION: The semiconductor storage unit includes: a first well 21 of a first conductivity type; a memory cell array 111 which is formed above the first well 21 including a first memory cell transistor MT; and a first wiring 36 (BL) connected to the first memory cell transistor MT. When deleting data on the first memory cell transistor, a first positive voltage (VERA, 24 V) is applied to the first wiring, and the electrical potential of the first well 21 is boosted to a second positive voltage (n-well electrical potential).SELECTED DRAWING: Figure 3
Inventors:
MAEJIMA HIROSHI
Application Number:
JP2015042540A
Publication Date:
September 05, 2016
Filing Date:
March 04, 2015
Export Citation:
Assignee:
TOSHIBA CORP
International Classes:
G11C16/04; G11C16/02; H01L21/336; H01L21/8247; H01L27/115; H01L29/788; H01L29/792
Attorney, Agent or Firm:
Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Katsu Sunagawa
Tadashi Inoue
Tatsushi Sato
Takashi Okada
Mihoko Horiuchi