SEMICONDUCTOR MEMORY DEVICE - TOSHIBA MEMORY CORP

Title:

SEMICONDUCTOR MEMORY DEVICE

Document Type and Number:

Japanese Patent JP2019169219

Kind Code:

A

Abstract:

To provide a high-quality semiconductor memory device.SOLUTION: The semiconductor memory device comprises a memory cell which includes: a resistance change unit in which resistance changes due to heat and which stores data by the resistance; and a first selector and a second selector connected in series to the resistance change unit and having characteristics different from each other, the semiconductor memory device further comprises a control unit which writes data into and reads data from the memory cell.SELECTED DRAWING: Figure 11

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Inventors:

NAKAZAWA SHINGO
MIYAZAKI TAKAYUKI

Application Number:

JP2018055609A

Publication Date:

October 03, 2019

Filing Date:

March 23, 2018

Export Citation:

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Assignee:

TOSHIBA MEMORY CORP

International Classes:

G11C13/00; H01L21/8239; H01L27/105

Attorney, Agent or Firm:

Kurata Masatoshi
Nobuhisa Nogawa
Takashi Mine
Naoki Kono
Ukai Ken

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