To provide a semiconductor memory element from which data can be read out at a high speed by reducing the input offset of a sense amplifier at an arbitrary point of time by incorporating a trimming device in the sense amplifier.

A semiconductor memory element M is provided with a memory cell 2, decoders 3 (row) and 4 (column), a sense amplifier 5, and a trimming device 8 and the amplifier 5 is constituted of a driver 6 and trimming blocks 7. When the trimming device 8 is constituted of a fuse array circuit, two control input signals are supplied as the output of the fuse array circuit. When the measured optimum trimming adjusting value of a certain sense amplifier is, for example, 15mV, the fuses of output circuits to first and second trimming blocks TRM 1 and TRM 2 do not blow off and and the output circuits are set to conducted states. Therefore, only the input offset of the sense amplifier becomes the minimum of 5mV, because both the two control inputs are outputted.