Title:
SEMICONDUCTOR MEMORY ELEMENT
Document Type and Number:
Japanese Patent JPH09148532
Kind Code:
A
Abstract:
To increase the number of times capable of rewriting by reducing the area of a capacitor for accumulating charges which is used for a semiconductor memory element.
As an insulating film 6 for a capacitor for accumulating charges which is used for a semiconductor memory element, the following is used; compound composed of lanthanum, lead titanate, and lead zirconate wherein the relation of at% X of lanthanum and mol% Y of lead zirconate is 5≤Y≤65 and -4.7X+108.5≤Y≤-4.7X+132.0, or compound composed of lanthanum, lead titanate, and lead zirconate which has relations of X≥5, Y≥45 and Y≤-4.7X+108.5.
Inventors:
SATOU KAZUYASU
WATANABE MICHIHIRO
KIYONO TASAKU
WATANABE MICHIHIRO
KIYONO TASAKU
Application Number:
JP30547095A
Publication Date:
June 06, 1997
Filing Date:
November 24, 1995
Export Citation:
Assignee:
HITACHI LTD
International Classes:
H01L27/04; H01L21/822; H01L21/8246; H01L27/105; (IPC1-7): H01L27/105; H01L27/04; H01L21/822
Attorney, Agent or Firm:
Ogawa Katsuo
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