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Title:
SEMICONDUCTOR MEMORY HAVING SEQUENCE-TYPE AND LATCH-TYPE ROW LINE REPEATER
Document Type and Number:
Japanese Patent JPH05266669
Kind Code:
A
Abstract:

PURPOSE: To obtain memory architecture where power loss are reduced by limiting the number of memory cells which are selected after a row line has been energized.

CONSTITUTION: The memory array of an integrated circuit memory 1 is divided into plural blocks or sub-arrays 12. Row line repeaters 15 having a latch are arranged between the respective sub-arrays, so that the row line from a row decoder 14 or from the preceding sub-array is linked to the succeeding sub-array. The row line repeaters are controlled, in accordance with a part of a column address. After all the selected rows have been energized, the row line repeaters which is not related to the selected sub-array deenergize the row line in their output ends. The row line repeaters which are related to the selected sub-array keeps the selected row line to be in an energizing state. Another kind of control for the row line repeaters from a power-on reset circuit 24 is executed.


Inventors:
William C. Slemer
David Charles McClure
Application Number:
JP24552591A
Publication Date:
October 15, 1993
Filing Date:
September 25, 1991
Export Citation:
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Assignee:
SGS-Thomson Microelectronics Incorporated
International Classes:
G11C8/00; G11C8/08; G11C8/12; G11C11/401; G11C16/06; G11C17/00; (IPC1-7): G11C11/41; G11C8/00; G11C11/401; G11C16/06
Attorney, Agent or Firm:
Kazuo Kobashi (1 person outside)



 
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