Title:
セミコンダクタ・メタル・オン・インシュレータ構造、斯かる構造の形成方法、及び斯かる構造を含む半導体装置
Document Type and Number:
Japanese Patent JP5671070
Kind Code:
B2
Abstract:
Methods for fabricating semiconductor-metal-on-insulator (SMOI) structures include forming an acceptor wafer including an insulator material on a first semiconductor substrate, forming a donor wafer including a conductive material and an amorphous silicon material on a second semiconductor substrate, and bonding the amorphous silicon material of the donor wafer to the insulator material of the acceptor wafer. SMOI structures formed from such methods are also disclosed, as are semiconductor devices including such SMOI structures.
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Inventors:
タン，サン ディー．
ジャーン，ミーン
ベイレス，アンドリュー エム．
ザフラク，ジョン ケー．
ジャーン，ミーン
ベイレス，アンドリュー エム．
ザフラク，ジョン ケー．
Application Number:
JP2012556081A
Publication Date:
February 18, 2015
Filing Date:
February 10, 2011
Export Citation:
Assignee:
マイクロン テクノロジー， インク．
International Classes:
H01L21/02; H01L27/12
Attorney, Agent or Firm:
Yasuhisa Nomura
Yoshiyuki Osuge
Yoshiyuki Osuge