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Patent Searching and Data


Title:
SEMICONDUCTOR MICRO RELAY AND MANUFACTURING METHOD THEREOF
Document Type and Number:
Japanese Patent JP2002170470
Kind Code:
A
Abstract:

To provide a semiconductor micro relay of vertical open/close type together with its manufacturing method, which is manufactured in a relatively simple manufacturing process with no constraint on a structure design.

There are provided a semiconductor substrate 1, an insulating layer 7 formed on it, a fixed conductive part 21 formed by plating on the insulating layer 7, a beam-like movable conductive part 31 so formed by plating as to face the fixed conductive part 21 with an interval while electrically separated, a support part 51 which rises above the fixed conductive part 21 to connect to a part of the movable conductive part 31 so that the movable conductive part 31 is physically supported on the substrate 1, and an acting part 8 which, formed on the movable conductive part 31, deflects a part of it in the direction vertical to the surface of the semiconductor substrate 1 so as to be electrically conductive to the fixed conductive part 21.


Inventors:
Yoshida, Hitoshi
Application Number:
JP2000000361975
Publication Date:
June 14, 2002
Filing Date:
November 28, 2000
Export Citation:
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Assignee:
MATSUSHITA ELECTRIC WORKS LTD
International Classes:
B81B3/00; B81C1/00; H01H37/14; H01H37/32; H01H37/52; H01H57/00; H01L41/09; H01L41/22; H01L41/313; H01H59/00; (IPC1-7): H01H57/00; B81B3/00; B81C1/00; H01H37/14; H01H37/32; H01H37/52; H01L41/09; H01L41/22
Attorney, Agent or Firm:
安藤 淳二 (外1名)