To improve the reliability against the destruction caused by thermal strain occurring in a connection part of a CAN shaped heat radiation base where a power semiconductor element is housed.
A semiconductor unit 30 having a semiconductor element 31 is housed in a frame 21. An opening 21c is formed in the frame 21 facing front and rear surfaces of the semiconductor unit 30, and a pair of fin plates 22, having multiple fins 22b, is disposed in the opening 21c. A thin wall connection part 22c, formed only by an upper layer part of a base part 22a with a peripheral side edge of the base part 22a on the semiconductor unit 30 side removed, is formed in the fin plate 22. A tip of the connection part 22c is joined to a peripheral part of the opening 21c of the frame 21.
SUWA TOKIHITO
KANEKO YUJIRO
MATSUSHITA AKIRA
HIRAMITSU SHINJI
| JP2005057212A | 2005-03-03 | |||
| JP2006202899A | 2006-08-03 | |||
| JP2011077464A | 2011-04-14 | |||
| JP2010110143A | 2010-05-13 | |||
| JP2013039615A | 2013-02-28 | |||
| JP2013013255A | 2013-01-17 | |||
| JP2013031330A | 2013-02-07 | |||
| JP2006202899A | 2006-08-03 | |||
| JP2003101277A | 2003-04-04 | |||
| JP2011077464A | 2011-04-14 | |||
| JP2005057212A | 2005-03-03 | |||
| JP2010110143A | 2010-05-13 | |||
| JP2013039615A | 2013-02-28 | |||
| JP2013013255A | 2013-01-17 | |||
| JP2013031330A | 2013-02-07 | |||
| JP2005175163A | 2005-06-30 |
| WO2012002454A1 | 2012-01-05 | |||
| WO2012002454A1 | 2012-01-05 |