Title:
半導体ナノ粒子製造方法
Document Type and Number:
Japanese Patent JP5086517
Kind Code:
B2
Abstract:
A reaction in which a surface-treating material for providing a semiconductor nanoparticle with one or more kinds of electron-releasing groups is added and in which the electron-releasing groups are arranged on the surface of the semiconductor nanoparticle is accelerated by irradiating the semiconductor nanoparticle with light during surface modification, thereby reducing the reaction time.
Inventors:
Keiichi Sato
Susumu Kuwabata
Susumu Kuwabata
Application Number:
JP2004025250A
Publication Date:
November 28, 2012
Filing Date:
February 02, 2004
Export Citation:
Assignee:
Hitachi Solutions Co., Ltd.
International Classes:
B82B3/00; C09K11/08; C09K11/02; C09K11/54; C09K11/55; C09K11/56; C09K11/59; C09K11/62; C09K11/66; C09K11/67; C09K11/68; C09K11/70; C09K11/74
Domestic Patent References:
| JP2002525394A | ||||
| JP2005105155A |
Foreign References:
| EP1384757A2 |
Attorney, Agent or Firm:
Yusuke Hiraki
Ishii Teiji
Satoshi Fujita
Ishii Teiji
Satoshi Fujita