PURPOSE: To provide a semiconductor optical device which has an effective current constriction structure due to an insulating layer and is capable of securing a sufficiently large contact area with an electrode, and manufacture which enables easy production of such semiconductor optical device.
CONSTITUTION: A dielectric layer 112 having stripe-like grooves is formed on the surface of a semiconductor substrate 102. On the surface of the semiconductor substrate 102 exposed through the stripe-like grooves, a semiconductor buffer layer 103, a semiconductor active layer 104 and a semiconductor clad layer 105 are sequentially formed. The semiconductor clad layer 105 has an inverted-trapezoid cross section. Since the semiconductor clad layer 105 has an inverted-trapezoid cross section, a sufficiently large contact area with a semiconductor cap layer is provided. Also, since the width of the semiconductor active layer 104 is specified by a groove provided in the insulating layer 112, a leak current to portions other than the semiconductor active layer 104 may be effectively restrained.
SUZUKI MAKOTO
NISHIMURA SHINJI
AOKI MASAHIRO
