Title:
SEMICONDUCTOR OPTICAL ELEMENT
Document Type and Number:
Japanese Patent JPH03145622
Kind Code:
A
Abstract:
PURPOSE:To operate the optical element which can be operated as an ultra-high speed optical modulator and a high-speed response photodetector by disposing an intermediate quantum well which does not accumulate electrons between a quantum well layer which accumulated electrons and a barrier layer. CONSTITUTION:A 3rd semiconductor layer 2 to serve as the intermediate well layer is disposed between a 1st semiconductor layer 1 which is the barrier layer and a 2nd semiconductor layer 3 which is the well layer. For example, a multiple quantum well structure is adopted in order to obtain the higher absorptivity. This element has n type electrode layers 4 on both sides, and also the InAlAs as barrier layer 1, the intermediate well layer 2 of InGaAlAs and the well layer 3 of InGaAs doped with an impurity. If the wavelength of incident light is taken at lambda1, lambda2, the light of any wavelength of lambda1, lambda2 is modulated by an external electric field and this element functions as the optical modulator. Thus, the operation of this element as the optical modulator or photodetector of a wavelength selection type or wavelength variable type is possible.
Inventors:
ASAI HIROMITSU
KAWAMURA YUICHI
KAWAMURA YUICHI
Application Number:
JP28286689A
Publication Date:
June 20, 1991
Filing Date:
November 01, 1989
Export Citation:
Assignee:
NIPPON TELEGRAPH & TELEPHONE
International Classes:
G02F1/015; H01L31/10; (IPC1-7): G02F1/015
Attorney, Agent or Firm:
Akihide Sugimura (1 outside)